个人简介

胡正光博士，1990年出生，南昌大学讲师，赣江青年学者。2007-2014年本硕毕业于南昌大学，2014-2019年毕业于北京师范大学，2019年进入南昌大学工作。主要研究方向聚焦于锂离子电池电极材料和固态电解质方向。发表SCI论文10余篇，目前承担企业横向课题1项。

第一/通讯作者论文

1. Xianxin Lai， Kaibo Fan， Zhiqi Zhang， Lili Cai， Zhongheng Zhu，Haozhong Huang， Qishen Zhang，Ling Sun， Zhehui Zhou， Li Wang， Zhengguang Hu**， Yong Zhao*. Cobalt hydroxide decorating N‑doped hollow carbon sphere as a new sulfur host to improve long cycle stability in lithium–sulfur batteries, 30, 2029-2038, (2024)

2. Kaibo Fan, Xianxin Lai, Zhiqi Zhang, Lili Chai, Qingchao Yang, Guanghao He, Song Liu, Ling Sun, Yong Zhao, Zhengguang Hu**, Li Wang*. poly(vinylidene fluoride)-based dual-salt composite polymer electrolytes for superior room-temperature solid-state lithium batteries, Journal of Power Sources，580, 233342 (2023).

3. Huizi Ye, Kai Cao, Xiaoqin Wu, Tong Zou, Lili Chai, Yong Zhao, Zhengguang Hu** and Li Wang*. A current collect-free Li1.2Ni0.13Co0.13Mn0.54O2 flexible film for high-performance lithium-ion batteries. Nanotechnology, 33, 045703(2022).

4. Zheng-Guang, Hu, Zhi-Yuan, Tan, Fang, Sun, Zhong, Lin, Jun, Chen, Xu-yao, Tang, Jie, Luo, Ling, Sun, Rui-Ting, Zheng, Yong-Chong, Chen, Guo-An, Cheng. The high cycling performance of ultra-thin Si nanowires fabricated by metal-assisted chemical etching method as lithium-ion batteries anode, Journal of Electroanalytical Chemistry, 878, 114567(2020).

5. Zheng Guang Hu, Zhi Yuan Tan, Zhong Lin, Jun Chen, Fang Sun, Xuyao Tang, Rui Ting Zheng, Yong Chong Chen, Guo An Cheng, Dynamic processes in Si and Si/C anodes in lithium-ion batteries during cycling, Journal of Electroanalytical Chemistry, 839, 187-194 (2019).

6. Zheng-Guang Hu; Zhi-Yuan Tan; Zhong Lin; Jun Chen, Bao-Shun Wang, Li-Fei Tian, Rui-Ting Zheng; Yong-Chong Chen, Guo-An Cheng. Cu ion implantation improves the performanceof Si film anode used in lithium ion battery, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 440, 191-196 (2019).

已授权专利

1． 王立，张智琦，胡正光，赵勇；一种富锂三元正极材料及其制备方法和应用. (专利号：ZL 2022 1 0903615.X)

2． 胡正光，王立，赵勇，王震东，王仲平，王剑宇，刘峰良；一种调控半导体腐蚀区域的方法. （专利号：ZL 2021 1 0457710.7）

3． 胡正光，王立，程国安，赵勇，刘峰良. 一种多孔银及其制备方法. （专利号：ZL 2020 1 0918307.5）

联系方式

邮箱：zhengguanghu@ncu.edu.cn；

地 址：江西省南昌市红谷滩新区学府大道999号，南昌大学物理与材料学院

办公室：理科生命大楼B416