教育及研修背景：

1995-1999，长春光学精密机械学院（现为长春理工大学），无机非金属材料，学士学位；

1999-2002，长春理工大学，材料学，硕士学位；

2002-2005，中国科学院理化技术研究所，物理化学，博士学位；

2006-2008，南昌大学，材料科学与工程，博士后

2016-2017，得克萨斯大学阿灵顿分校，物理系，访问学者

主要研究兴趣：

光转换功能材料的探索和研究，包括材料合成、相图研究、结构分析、光谱分析和光学性能研究。

主要研究课题：

－La2CaB8O16:Eu3+，Bi3+红色荧光粉的双格位取代形成机制及其发光性能研究

－白光LED用红色荧光粉La2SrB10O19:Eu3+的研制；

－核壳结合五氧化二锑干粉的工业化生产技术与应用研究

－ZnO纳米材料补偿共掺杂机制及其光电器件构筑研究

发表论文与专利：

[1]RuiGuo, Songling Tang, ShaobinZhong, LanLuo, Baochang Cheng, YuhuaXiong. Photoluminescenceproperties ofSr2MgB2O6:Eu3+redphosphorundernear-UVexcitation. Solid State Sciences, 2015,50:65-68.

[2]Baochang Cheng, Jie Zhao, Xiao, Li Cai,QiangshengRuiGuo, Yanhe Xiao, Shuijin Lei. PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction. Scientific Reports,2015,DOI: 10.1038/srep17859.

[3]Jie Zhao,Baochang Cheng,YanheXiao, RuiGuo, Shuijin Lei.Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias.Journal of Materials Chemistry C, 2015, 3(47):12220-12229.

[4]JianpingZheng, Baochang Cheng, Fuzhang Wu, Xiaohui Su, Yanhe Xiao, RuiGuo, Shuijin Lei.Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory.ACS Applied Materials and Interfaces, 2014, 6(23): 20812-20818.

[5] Synthesis and luminescent properties of a new phosphor, La2CaB8O16:RE3+(RE = Eu, Tb). J. Alloys Compd., 2013, 550: 459-462.

[6] A new red emitting phosphor:La2SrB10O19:Eu3+. J. Lumin., 2013,138: 170-173.

[7]RuiGuo, Songling Tang, Baochang Cheng, Dunqiang Tan, YuhuaXiong. Synthesis and photoluminescence properties of a new green emitting phosphor La2SrB10O19:Tb3+. Optical Materials, 35 (2013) 1609-1611.

[8] 一种白光LED用的硼酸盐基红色荧光粉及其制备方法.专利申请号：201210379167.4.

[9]一种制备材料芯片的正交组合掩膜方法说明书. 专利号: 201510900519. X.

[10] 一种去除硬质合金件表面涂层的方法.专利公开号: CN102392249A