王剑宇，博士，南昌大学副教授。 2010年毕业于南京大学物理系，2016年获南京大学博士学位，日本物质材料研究所联合培养博士，2019年耶鲁大学访问学者。2016年起于南昌大学工作，从事纳米半导体材料制备及器件研究，共发表SCI论文28篇，承担国家基金2项。

承担科研项目

国家自然科学基金委员会，青年基金项目，62005112，一维限制结构增强的单纳米颗粒等离激元探测方法及基因突变检测研究，2021/01-2023/12，24万元，在研，主持

国家自然科学基金委员会，地区科学基金项目，61764011，多层范德华异质结的金属诱导定点构筑及其光电性能研究，2018/01-2021/12，39万元，在研，参加

代表性学术成果

[1] J. Wang, Z. Wang, Q. Wang, Y. Lu, L. Wang, Passive Electronic Skin with Highly Sensitive Tactile Sensory Capabilities, ACS Applied Electronic Materials, 3 (2021) 4517-4521.

[2] K. Cao, Z. Hu, J. Wang, F. Liu, X. Wu, Z. Wang, L. Wang, CVD growth of rhenium sulfide on carbon nanotubes as an anode for improving the performance of lithium ion batteries, Nanotechnology, 32 (2021) 155703.

[3] W. Hou, J. Wang, Z. Wang, K. Cao, L. Qin, L. Wang, Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases, CrystEngComm, 22 (2020) 1018-1023.

[4] Z. Wang, H. Yang, S. Zhang, J. Wang, K. Cao, Y. Lu, W. Hou, S. Guo, X.-A. Zhang, L. Wang, An approach to high-throughput growth of submillimeter transition metal dichalcogenide single crystals, Nanoscale, 11 (2019) 22440-22445.

[5] J. Wang, Y. Sheng, H. Sun, F. Gao, D. Zhang, Y. Zheng, Y. Shi, Enhanced polarization photodetection of metallic cavity ensemble through spontaneously configured lateral electrodes, Nanotechnology, 30 (2019) 495204.

[6] M. Sumiya, N. Toyomitsu, Y. Nakano, J. Wang, Y. Harada, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates, APL Materials, 5 (2017) 016105.

[7] J. Wang, H. Sun, Y. Sheng, L. Yang, F. Gao, Y. Yin, Z. Hu, Q. Wan, R. Zhang, Y. Zheng, Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies, Appl. Surf. Sci., 361 (2016) 221-225.

[8] J. Wang, Y. Oshima, Y. Cho, Y. Shi, T. Sekiguchi, Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN, Superlattices Microstruct., 99 (2016) 77-82.

[9] F. Gao, D. Zhang, J. Wang, H. Sun, Y. Yin, Y. Sheng, S. Yan, B. Yan, C. Sui, Y. Zheng, Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes, Appl. Phys. Lett., 108 (2016) 261103.

[10] W. Yang, B. Liu, B. Yang, J. Wang, T. Sekiguchi, S. Thorsten, X. Jiang, Pseudobinary Solid‐Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP–ZnSe, Adv. Funct. Mater., 25 (2015) 2543-2551.

[11] J. Wang, H. Sun, Y. Sheng, F. Gao, Y. Yin, Y. Li, L. Pan, Y. Zheng, Y. Shi, T. Sekiguchi, Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate, physica status solidi (RRL)–Rapid Research Letters, 9 (2015) 466-469.

[12] J. Wang, Y. Harada, M. Sumiya, Y. Shi, T. Sekiguchi, Cathodoluminescence study of optical properties along the growth direction of ZnO films on GaN substrate, physica status solidi (c), 12 (2015) 1129-1131.

联系方式

jywang@ncu.edu.cn