4，Xuhui Xiong, Hu Liu, Wei Wang, Jinhui Gong, Xiangting Chen, Yaxuan Zhao, Tingfang Tian*, Li Wang*,Fluorescence-enhanced Cs4PbBr6/CsPbBr3 composites films synthesized by double-films solid phase reaction method, Luminescence. 36, 631-641, 2020

5，Siyu Guo, Hu Liu,* Haiyang He, Wei Wang, Lin Jiang, Xuhui Xiong, and Li Wang*，Eco-Friendly Strategy To Improve Durability and Stability ofZwitterionic Capping Ligand Colloidal CsPbBr3 Nanocrystals，Langmuir, 36, 6775−6781，2020

6，Longlong Shu,Shanming Ke,Linfeng Fei,Wenbin Huang,Zhiguo Wang,JinhuiGong,Xiaoning Jiang,Li Wang,Fei Li,Shuijin Lei,Zhenggang Rao,Yangbo Zhou,Ren-Kui Zheng,Xi Yao,Yu Wang,Massimiliano Stengel&Gustau Catalan, Photoflexoelectric effect in halide perovskites, Nature Materials, 19,605–609, 2020

7，Xiao Yang, Fan Li, * Xiaofeng Wang, Yifei Xu, Haoliang Wei and Li Wang*, In situ tetrafluoroborate-modified MAPbBr3nanocrystals showing high photoluminescence,stability and self-assembly behavior, J. Mater. Chem. C,8, 1989-1997, 2020

8，Li Wang*, Yiyuan Zhu, Hu Liu, Jinghui Gong, Wei Wang, Siyu Guo, Yao Yu, Haiyan Peng, Yonggui Liao*，Giant Stability Enhancement of CsPbX3 Nanocrystal Films by Plasma-Induced Ligand Polymerization，ACS Appl. Mater. Interfaces，11，35270-35276，2019

9，Hu Liu, Haiyang He, Qinyao Sun, Kaixi Lin, Yong Yao, Li Wang*，A new approach to stabilize the CsPbX3 quantum dots by double chemical coupling with stress，Journalof Alloys and Compounds, 782, 235-241，2019

10，Hong Peng, Xingcan Feng, Jinhui Gong, Wei Wang, Hu Liu, Zhijue Quan, Shuan Pan，Li Wang*，Low temperature growth of polycrystalline InN films on non-crystallinesubstrates by plasmaenhanced atomic layer deposition，Appl. Surf. Sci. 459, 830-834，2018

11，Xingcan Feng, Hong Peng, Jinhui Gong, Wei Wang, Hu Liu, Zhijue Quan, Shuan Pan, Li Wang⁎，Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition，J. Appl. Phys.124, 243104，2018

12，Yuandan He,Jinhui Gong, Yiyuan Zhu, Xingcan Feng, Hong Peng, Wei Wang, Haiyang He,Hu Liu*, Li Wang*，Highly pure yellow light emission of perovskite CsPb(BrxI1-x)3 quantum dotsand their application for yellow light-emitting diodes, Optical Materials 80, 1-6, 2018

13，Yiyuan Zhu, Yuandan He, Jinhui Gong, Xingcan Feng, Hong Peng, Wei Wang,Haiyang He, Hu Liu, and Li Wang*，Highly stable all-inorganic CsPbBr3 nanocrystalsfilm encapsulated with alumina byplasmaenhanced atomic layer deposition, Materials Express 8, 469-474,2018

14，Jinhui Gong, Shitao Liu, Yuandan He, Xingcan Feng, Xuefeng Xia, Zhijue Quan, Li Wang*, Study on the band alignment of GaN/CH3NH3PbBr3 heterojunction by x-ray photoelectron spectroscopy, Appl. Phys. Lett.111, 122103, 2017

15，Shitao Liu, FeifeiWu, Qi Yang, Yuandan He, Jianli Zhang, Zhijue Quan, Haibin Huang, Li Wang*, Influence of carrier escape mechanism on the operating wavelength of InGaN/GaN multiple quantum well solar cells, Optoelctron. Adv. Mat. 11, 555–559, 2017

16，Shitao Liu, Zhijue Quan, Li Wang*, Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells,Chinese Phys. B 26, 038104, 2017

17，Shitao Liu,Li Wang*,Zhijue Quan, Role of n-ZnO layer on the improvement of interfacial properties in ZnO/InGaN p-i-n solar cells, Trans.Tianjin Univ. 23，1–7, 2017

18，Li Wang*, Feifei Wu, Shitao Liu, Qi Yang, Yong Zhao, Daofu Han, Zhijue Quan, Fengyi Jiang, Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer, J. Appl. Phys. 118,165703, 2015

19，Zhijue Quan*, Li Wang*, Changda Zheng, Junlin Liu, Fengyi Jiang, Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes，J. Appl. Phys. 116, 183107, 2014

20，Li Wang*, Zhiyong Cui, Fusheng Huang, Qin Wu, Wen Liu, Xiaolan Wang, Qinghua Mao, Jianli Zhang, Fengyi Jiang, Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs, Appl. Phys. Express7, 012102, 2014

21，Li Wang*, Fusheng Huang, Zhiyong Cui, Qin Wu, Wen Liu, Changda Zheng, Qinghua Mao, Chuanbing Xiong, Fengyi Jiang, Crystallographic tilting of AlN/GaN layers on miscut Si (111) substrates, Mater. Lett. 115, 89–91, 2014

22，Danyang Chen, LiWang*, Chuanbing Xiong, Changda Zheng, Chunlan Mo, Fengyi Jiang, Stress distribution in GaN films grown on patterned Si (111) substrates and its effect on LED performance,Chinese Phys. Lett. 30, 098101, 2013

23、王立，朱怡远，胶体量子点图案化方法，中国发明专利，ZL 201811213615.7，授权日2020.7.14

24、Wang Li；Jiang Fengyi；Fang Wenqing，InGaAlNLight-Emitting Device，美国发明专利，US7692205，授权日期2010.4.6

25、Wang Li；Jiang Fengyi；Zhou Maoxing；Fang Wenqing，Semiconductor Light-Emitting Device with Electrode for N-Polar InGaAlN Surface，美国发明专利，US7705348，授权日期2010.4.27

26、Wang Li；Jiang Fengyi；Tang Yingwen；Liu Junlin，Method for fabricating high-power light-emitting diodesarrays，美国发明专利，US8044416，授权日期2011.10.25

27、WangLi,Jiang Fengyi, Method For Obtaining High-quality Boundary For Semiconductor Devices Fabricated on A Patitioned Substrate, 美国发明专利，US8426325, 授权日期2013-4-23

28、Wang Li,Jiang Fengyi, Method For Fabricating Robust Light-emitting Diodes，美国发明专利，US8222063，授权日期2012-7-17

29、Wang Li；Jiang Fengyi，Method for Obtaining High-Quality Boundary for Semiconductor Devices Fabricated on a Partitioned Substrate，欧洲发明专利，EP2140504，授权日期2011.4.20

30、王立；江风益，获得在分割衬底上制造的半导体器件的高质量边界的方法，中国发明专利，ZL 200710104428.0，授权日期2010.1.13

31、王立；江风益，制备牢固的发光二极管的方法，中国发明专利，ZL 200880128208.4，授权日期2011.11.16

32、王立；方文卿；江风益，在硅衬底上制备铟镓铝氮材料的方法中国发明专利，ZL200510027808.X，授权日期2008.2，

33、王立；江风益；周毛兴；方文卿，含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法，中国发明专利，ZL200510030874.2，授权日期2008.3

34、王立；江风益；汤英文；刘卫华，一种制造半导体发光器件的方法， 中国发明专利，ZL200780101041.8，授权日期2012.11.28

35、王立，汤英文，江风益，一种倒装半导体发光器件及其制造方法， 中国发明专利，ZL201110325094.6，授权日期2013.11

36、王立、江风益、方文卿，铟镓铝氮发光器件，中国发明专利，ZL200510030320.2，授权日期2007.8.8

联系方式

邮箱：wl@ncu.edu.cn，QQ：474971

地址：南昌市艾溪湖北路679号，南昌大学国家硅基LED工程技术研究中心