个人简介

王小兰博士，1977年出生，南昌大学副研究员，硕士生导师。2007年博士毕业于中科院半导体所，2011年起在南昌大学工作。主要研究方向聚焦于GaN相关材料与器件研究。参与和主持国家重点研发项目、国家自然科学基金等10余项，发表论文30余篇，获授权及申请专利近10项。

承担科研项目

（1）主持国家自然科学青年基金项目“490nmGaN基青光LED的关键技术研究”直接经费24万元，执行年限：2018-2020

（2）作为子课题负责人承担国家重大研发计划“战略性先进电子材料”专项——大失配、弱分凝InGaN外延生长和高发光效率绿光量子阱研究，300万元,执行年限：2016-2020

代表性学术成果

1.Jia-Ming Zeng(曾家明), Xiao-Lan Wang(王小兰)∗, Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Jian-Li Zhang(张建立), Shuan Pan(潘拴), Feng-Yi Jiang(江风益) ，Effect of Barrier Temperature on Photoelectric Properties of GaN-Based Yellow LEDs，CHIN.PHYS.LETT. Vol.37, No.3(2020)038502

2.Chunlan Mo，Fang Liao，Xiaolan Wang*，Changda Zheng，Jianli Zhang，Zhenxu Wang,

Junlin Liu，Fengyi Jiang ，Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits，Semiconductor Science and Technology，Vol 35,No.4(2020)035030

3.Jianli Zhang, Xiaolan Wang∗, Junlin Liu, Chunlan Mo, Xiaoming Wu, GuangxuWang, Fengyi Jiang，Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region，Optical Materials 8646-50 2018

4. Zhi-Hui Wang(王智辉), Xiao-Lan Wang(王小兰)*, Jun-Lin Liu(刘军林), Jian-Li Zhang(张建立),Chun-Lan Mo(莫春兰), 等，Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes，CHIN. PHYS. LETT. 087302-1-4 2018

5.聂晓辉，王小兰*，莫春兰，张建立，潘拴，刘军林，V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响，发光学报38(6) 735-741 2018

6.X. L. Wang, D. G. Zhao, X. Y. Li, H. M. Gong, H. Yang, J. W. Liang, The effect of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayer, Materials Letters, 60, (3693) 2006

7.X. L. Wang, D. G. Zhao, X. Y. Li, H. M. Gong, H. Yang, Effect of oxidation on the optical and surface properties of AlGaN, Applied Surface Science, 252, (8706) 2006

8.X. L. Wang, D. G. Zhao,U Jahn, K. Ploog, D S Jiang, H Yang, and J W Liang, The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al compostion inhomogeneity analysis, Journal of Physics D: Applied Physics, 40, (1113) 2007

9.WANG Xiao- Lan(王小兰), ZHAO De- Gang(赵德刚)，YANG Hui（杨辉），LIANG Jun-Wu（梁骏吾），Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapor deposition, Chinese Physics Letters, 24, (774) 2007

10.X. L. Wang, D. G, Zhao, D. S. Jiang, H. Yang, J. W. Liang, U. Jahn, K. Ploog, Al compositional inhomogeneityof AlGaN epilayer with a high Al composition grown by metal-organic chemical vapor deposition, Journal of Physics: Condensed Matter, 19, (176005) 2007

联系方式

邮箱：wangxiaolan@ncu.edu.cn

地址：江西省南昌市高新区艾溪湖北路679号，南昌大学国家硅基LED工程研究中心

QQ: 2456317271